Takahiro Ohnakado: ""Electrical properties of ZuSe-based semiconductor/ (NH_4) _2S_x -pretreated GaAs heterointerfaces"" Extend. Abst. 1991 Int. Conf. Solid State Devices and Mater. 695-697 (1991)
Takahiro Ohnakado: ""Electrical properties of ZuSe-based semiconductor/ (NH_4) _2S_x -pretreated GaAs heterointerfaces"" Extend. Abst. 1991 Int. Conf. Solid State Devices and Mater. 695-697 (1991)
复制标题
Takahiro Onakado:““ZuSe 基半导体/ (NH_4) _2S_x 预处理的 GaAs 异质界面的电特性”扩展。
DOI:
--
复制
发表时间:
--
期刊:
影响因子:
--
通讯作者:
中科院分区:
文献类型:
--
作者: