Growth and atomic structure of tellurium thin films grown on Bi2Te3
Growth and atomic structure of tellurium thin films grown on Bi2Te3
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DOI：
10.1016/j.apsusc.2016.11.196
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发表时间：
2017-03
影响因子：
6.7
通讯作者：
Yuma Okuyama;Y. Sugiyama;S. Ideta;Kiyohisa Tanaka;T. Hirahara
中科院分区：
文献类型：
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作者：
Yuma Okuyama;Y. Sugiyama;S. Ideta;Kiyohisa Tanaka;T. Hirahara
我们在Bi 2 Te 3衬底上生长了碲（Te）薄膜，并研究了其原子结构.通过低能电子衍射（LEED）测量，我们发现Te薄膜是[10 1 <$0]取向的六畴结构。的反射高能电子衍射（RHEED）图案的详细分析表明，薄膜的应变与面内晶格常数压缩了1.5%相比，由于Te和Bi 2 Te 3之间的外延体值。这些薄膜将是有趣的系统，调查预测的拓扑相位发生在应变碲。
We have grown tellurium (Te) thin films on Bi 2 Te 3 and investigated the atomic structure. From low-energy electron diffraction (LEED) measurements, we found that the Te films are [10 1¯ 0]-oriented with six domains. A detailed analysis of the reflection high-energy electron diffraction (RHEED) pattern revealed that the films are strained with the in-plane lattice constant compressed by∼ 1.5% compared to the bulk value due to the epitaxy between Te and Bi 2 Te 3. These films will be interesting systems to investigate the predicted topological phases that occur in strained Te.