Strain relaxation in InAs heteroepitaxy on lattice-mismatched substrates
Strain relaxation in InAs heteroepitaxy on lattice-mismatched substrates
复制标题
晶格失配衬底上 InAs 异质外延中的应变弛豫
DOI：
10.1038/s41598-020-61527-9
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发表时间：
2020
影响因子：
4.6
通讯作者：
Sakuma Yoshiki
中科院分区：
文献类型：
--
作者：
Ohtake Akihiro;Mano Takaaki;Sakuma Yoshiki
研究了InAs异质外延中的应变松弛过程。当InAs在GaAs(111) a、Si（111）和GaSb(111) a晶格不匹配的衬底上逐层生长时，应变弛豫过程强烈依赖于晶格不匹配。纳米钛酸钠薄膜中的穿线缺陷密度随着晶格失配而增加。我们发现x射线衍射的峰宽对缺陷密度不敏感，但关键取决于InAs薄膜中的残余晶格应变。
Strain relaxation processes in InAs heteroepitaxy have been studied. While InAs grows in a layer-by-layer mode on lattice-mismatched substrates of GaAs(111)A, Si(111), and GaSb(111)A, the strain relaxation process strongly depends on the lattice mismatch. The density of threading defects in the InAs film increases with lattice mismatch. We found that the peak width in x-ray diffraction is insensitive to the defect density, but critically depends on the residual lattice strain in InAs films.