Comparison of MOCVD and MBE Regrowth for CAVET Fabrication
Comparison of MOCVD and MBE Regrowth for CAVET Fabrication
复制标题
CAVET 制造的 MOCVD 和 MBE 再生长比较
DOI：
10.3390/electronics8040377
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发表时间：
2019
期刊：
影响因子：
2.9
通讯作者：
A. Vescan
中科院分区：
文献类型：
--
作者：
S. Kotzea;W. Witte;B. Godejohann;Mathias Marx;M. Heuken;H. Kalisch;R. Aidam;A. Vescan
本文介绍了用两种不同的外延生长方法制备电流孔径垂直电子晶体管(CAVET)的方法。采用金属有机化学气相沉积(MOCVD)方法制备了具有p-GaN电流阻挡层(CBL)的模板。然后通过分子束外延(MBE)或MOCVD重新生长沟道层和势垒层。扫描电子显微镜(SEM)图像和原子力显微镜(AFM)高度分布被用来识别不同的再生机制。结果表明，沟道层下方的AlN过渡层能够减少高温MOCVD再生长过程中的镁扩散。对于低温分子束外延再生长，成功地抑制了镁的扩散。在不同的样品上实现了CAVET。器件存在高泄漏电流，因此需要进一步优化再生长。
In this paper, we demonstrate the fabrication of current aperture vertical electron transistors (CAVET) realized with two different epitaxial growth methods. Templates with a p-GaN current blocking layer (CBL) were deposited by metal organic chemical vapor deposition (MOCVD). Channel and barrier layers were then regrown by either molecular beam epitaxy (MBE) or MOCVD. Scanning electron microscope (SEM) images and atomic force microscope (AFM) height profiles are used to identify the different regrowth mechanisms. We show that an AlN interlayer below the channel layer was able to reduce Mg diffusion during the high temperature MOCVD regrowth process. For the low-temperature MBE regrowth, Mg diffusion was successfully suppressed. CAVET were realized on the various samples. The devices suffer from high leakage currents, thus further regrowth optimization is needed.