3.2-mW Ultra-Low-Power 173–207-GHz Amplifier With 130-nm SiGe HBTs Operating in Saturation
3.2-mW Ultra-Low-Power 173–207-GHz Amplifier With 130-nm SiGe HBTs Operating in Saturation
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DOI：
10.1109/jssc.2019.2959510
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发表时间：
2020-06
影响因子：
5.4
通讯作者：
Yaxin Zhang;W. Liang;Xiaodi Jin;Mario Krattenmacher;Sophia Falk;P. Sakalas;B. Heinemann;M. Schröter
中科院分区：
文献类型：
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作者：
Yaxin Zhang;W. Liang;Xiaodi Jin;Mario Krattenmacher;Sophia Falk;P. Sakalas;B. Heinemann;M. Schröter
本文介绍了一种工作频率为200ghz的超低功耗硅锗异质结双极晶体管（SiGe HBT）放大器。该放大器由三个级联增益单元级组成，并在实验130 nm SiGe HBT技术上实现，峰值$f_{{\textrm {T}}}/f_{\text {max}}$为460/600 GHz。为了实现所演示的极低直流功耗，电路设计了工作在正偏基极-集电极结电压（$V_{\text {BC}}$）下的晶体管。在1.3 V供电电压（$V_{\text {BC}}\约0.2$ V）下，该放大器在180和205 GHz时的峰值增益为23.5 dB，在173至207 GHz范围内的34 GHz 3-dB带宽（BW）为3.2 mw。即使电源电压为0.7 V ($V_{\text {BC}} \约0.5$ V)，该放大器在175 GHz时仍能以18.3 dB的峰值增益工作，耗散极低的1.73 mW直流功率。与之前报道的工作在200 GHz左右的低功率放大器相比，本文实现了相对于直流功耗的最高线性增益，提高了十倍，并且在噪声系数和3 db BW方面具有极具竞争力的性能。
This article presents an ultra-low-power silicon germanium heterojunction bipolar transistor (SiGe HBT) amplifier operating at 200 GHz. The amplifier consists of three cascaded gain-cell stages and was implemented in an experimental 130-nm SiGe HBT technology with peak $f_{{\textrm {T}}}/f_{\text {max}}$ of 460/600 GHz. In order to achieve the demonstrated extremely low dc power dissipation, the circuit was designed with transistors operating at forward-biased base–collector junction voltage ( $V_{\text {BC}}$ ). With 1.3-V supply voltage ( $V_{\text {BC}}\approx 0.2$ V), this amplifier exhibits a peak gain of 23.5 dB at 180 and 205 GHz with 34-GHz 3-dB bandwidth (BW) from 173 to 207 GHz, consuming 3.2-mW static dc power. Even with a supply voltage of 0.7 V ( $V_{\text {BC}} \approx 0.5$ V), this amplifier still operates with a peak gain of 18.3 dB at 175 GHz, dissipating an extremely low dc power of 1.73 mW. Compared with the previously reported low-power amplifiers operating around 200 GHz, this article achieves the highest linear gain relative to the dc power consumption with an improvement factor of ten, as well as highly competitive performances in terms of noise figure and 3-dB BW.