The threshold voltage model of a SOI-MOSFET on films with Gaussian profile
The threshold voltage model of a SOI-MOSFET on films with Gaussian profile
复制标题
DOI：
10.1109/iccdcs.2000.869846
复制
发表时间：
2000-03
期刊：
影响因子：
--
通讯作者：
Cristian Ravariu;Adrian Rusu;F. Ravariu;Dobrescu;'. LidiaDobrescu;Politechnica
中科院分区：
文献类型：
--
作者：
Cristian Ravariu;Adrian Rusu;F. Ravariu;Dobrescu;'. LidiaDobrescu;Politechnica
电场和电势分布的解析模型对SOI器件，如SOI-MOSFET、SOI-BJT、三维器件、SOI传感器等都有很好的应用。例如，它们是建立前、后界面的反转或聚集条件所必需的。该文件是指一个一维的分析，无论是部分和完全耗尽的设备上的非均匀掺杂的薄膜。本文的目的是获得一个精确的模型，在SOI结构中的电场和电势分布的高斯掺杂浓度的膜中的杂质。结果已被用于阈值电压的推导，但它们代表了一个参考点，在开发新的模型上的SOI器件的高斯分布薄膜。在完全耗尽薄膜的情况下，考虑了硅衬底的耗尽，以使栅电压完全耗尽薄膜。结果与PISCES数值模拟结果进行了比较，吻合良好。
The analytical models for electric field and potential distributions are useful for a lot of SOI devices, like SOI-MOSFET, SOI-BJT, three-dimensional device, SOI sensors and the others. For example, they are necessary for establish the inversion or accumulation conditions for front and back interfaces. The paper refers to a one-dimensional analysis, both for partially and fully depleted devices on films with nonuniform doping. The goal of this paper is to obtain an accurate model for the field and the potential distribution in the SOI structures with Gaussian doping concentration of impurities in the film. The results have been used for threshold voltage deduction, but they represent a reference point in developing of new models for SOI-devices fabricated on Gaussian profile films. In the fully depleted films case, the depletion of the silicon substrate for gate voltages that entirely depleted the film was considered. The results were compared with PISCES numerical simulations and were in good agreement.