Dissipationless quantum spin current at room temperature
Dissipationless quantum spin current at room temperature
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DOI：
10.1126/science.1087128
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发表时间：
2003-09-05
期刊：
影响因子：
56.9
通讯作者：
Zhang, SC
中科院分区：
文献类型：
--
作者：
Murakami, S;Nagaosa, N;Zhang, SC
虽然微观物理定律在时间箭头的逆转下是不变的，但大多数设备中能量和信息的传输是不可逆的过程。正是这种不可逆性导致了电子器件的内在耗散，限制了量子计算的可能性。我们从理论上预测，在室温下，电场可以在空穴掺杂半导体如Si，Ge和GaAs中诱导大量的无耗散量子自旋电流。量子霍尔效应的概括的基础上，预测的效果导致有效的自旋注入，而不需要金属铁磁体。这里发现的原理可以使量子自旋电子器件具有集成的信息处理和存储单元，以低功耗运行并执行可逆量子计算。
Although microscopic laws of physics are invariant under the reversal of the arrow of time, the transport of energy and information in most devices is an irreversible process. It is this irreversibility that leads to intrinsic dissipations in electronic devices and limits the possibility of quantum computation. We theoretically predict that the electric field can induce a substantial amount of dissipationless quantum spin current at room temperature, in hole-doped semiconductors such as Si, Ge, and GaAs. On the basis of a generalization of the quantum Hall effect, the predicted effect leads to efficient spin injection without the need for metallic ferromagnets. Principles found here could enable quantum spintronic devices with integrated information processing and storage units, operating with low power consumption and performing reversible quantum computation.