Effect of oxygen plasma etching on graphene studied using Raman spectroscopy and electronic transport measurements
Effect of oxygen plasma etching on graphene studied using Raman spectroscopy and electronic transport measurements
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DOI：
10.1088/1367-2630/13/2/025008
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发表时间：
2011-02-10
影响因子：
3.3
通讯作者：
Chen, Yong P.
中科院分区：
文献类型：
--
作者：
Childres, Isaac;Jauregui, Luis A.;Chen, Yong P.
在本文中，我们报告了石墨烯和石墨烯场效应器件暴露于一系列短脉冲氧等离子体后的研究。我们的数据从拉曼光谱，背门场效应和磁输运测量。观察到拉曼“D”和“G”峰之间的强度比I-D/I-G（通常用于表征石墨烯中的无序）最初几乎随等离子体蚀刻脉冲的数量（N-e）线性增加，但随后在更高的N-e值处减小。我们还讨论了从I-D/I-G中提取石墨烯晶畴尺寸的数据的影响。在测量的最高N-e值下，发现“2D”峰几乎被抑制，而“D”峰仍然突出。等离子体蚀刻的石墨烯中的电子输运测量显示狄拉克点的上移，表明空穴掺杂。我们还表征流动性，量子霍尔态，弱本地化和各种散射长度在一个适度蚀刻的样品。我们的研究结果对于理解等离子体刻蚀对石墨烯的影响以及通过人工产生的缺陷来理解无序石墨烯的物理性质是有价值的。
In this paper, we report a study of graphene and graphene field effect devices after their exposure to a series of short pulses of oxygen plasma. Our data from Raman spectroscopy, back-gated field-effect and magnetotransport measurements are presented. The intensity ratio between Raman 'D' and 'G' peaks, I-D/I-G (commonly used to characterize disorder in graphene), is observed to initially increase almost linearly with the number (N-e) of plasma-etching pulses, but later decreases at higher N-e values. We also discuss the implications of our data for extracting graphene crystalline domain sizes from I-D/I-G. At the highest N-e value measured, the '2D' peak is found to be nearly suppressed while the 'D' peak is still prominent. Electronic transport measurements in plasma-etched graphene show an up-shifting of the Dirac point, indicating hole doping. We also characterize mobility, quantum Hall states, weak localization and various scattering lengths in a moderately etched sample. Our findings are valuable for understanding the effects of plasma etching on graphene and the physics of disordered graphene through artificially generated defects.