Room-Temperature Fabrication of High-Quality Lanthanum Oxide High-κ Dielectric Films by a Solution Process for Low-Power Soft Electronics
Room-Temperature Fabrication of High-Quality Lanthanum Oxide High-κ Dielectric Films by a Solution Process for Low-Power Soft Electronics
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通过低功耗软电子解决方案工艺室温制备高质量氧化镧高π介电薄膜
DOI：
10.1002/aelm.201900427
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发表时间：
2019
影响因子：
6.2
通讯作者：
Junming Liu
中科院分区：
文献类型：
--
作者：
Kai Zhao;Yanfen Gong;Longsen Yan;Waner He;Dao Wang;Jiali Wang;Zhengmiao Zou;Chunlai Luo;Aihua Zhang;Zhen Fan;Jinwei Gao;Honglong Ning;Guofu Zhou;Xubing Lu;Junming Liu
高质量的介电薄膜对于场效应电子器件提供高电气性能是不可或缺的。然而，在柔性衬底上沉积高质量的介电薄膜仍然是一项具有挑战性的任务，这极大地限制了柔性或有机场效应器件的电气性能。提出了一种室温深紫外（DUV）辐照工艺用于溶液处理的La 2 O3薄膜的致密化。结果发现，室温DUV-La 2 O3薄膜不仅表现出与高温退火的-La 2 O3薄膜相当的漏电和介电性能，而且具有非常光滑和清洁的表面以及优异的弯曲应变容限。所制备的La 2 O3薄膜具有宽带隙（5.78 eV）、高介电常数（12.68）、低漏电流密度（8.8 × 10−7A cm− 2 at 2 MV cm−1）和高击穿场强（3.5 MV cm−1）。基于高质量溶液处理的La 2 O3栅介质的有机薄膜晶体管（OTFT）具有低工作电压（≤3 V）、低栅极漏电流（<10−9A）和高Ion/Ioffratio（>105）。基于这些室温制备的高性能OTFT，成功制备了低电压互补集成电路，包括互补反相器和NAND门电路。结果表明，室温DUV处理的La 2 O3薄膜是未来柔性和低功耗电子器件的理想栅极介电材料。
High‐quality dielectric films are indispensable for field‐effect electronic devices to provide high electrical performance. However, deposition of high‐quality dielectric films on flexible substrate remains a challenging task, which greatly limits the electrical performance of flexible or organic field‐effect devices. A room‐temperature deep ultraviolet (DUV) irradiation process is proposed for densification of solution‐processed La2O3films. It is found that room‐temperature DUV‐La2O3films not only exhibit leakage and dielectric properties that are comparable to those of high‐temperature annealed‐La2O3films, but also have very smooth and clean surfaces and excellent bending strain tolerance. The fabricated La2O3films exhibit a wide band gap (5.78 eV), high dielectric constant (12.68), low leakage density (8.8 × 10−7A cm−2at 2 MV cm−1), and high breakdown field strength (3.5 MV cm−1). Organic thin‐film transistors (OTFTs) based on high‐quality solution‐processed La2O3gate dielectrics show a low operation voltage (≤3 V), low gate leakage current (<10−9A), and highIon/Ioffratio (>105). Based on these room‐temperature‐fabricated high‐performance OTFTs, low‐voltage complementary integrated circuits are successfully fabricated, including complementary inverters and NAND gate circuits. The results demonstrate that room‐temperature DUV‐processed La2O3films are ideal gate dielectric materials for future flexible and low‐power‐consumption electronic devices.