Aerosol Jet Printed p- and n-type Electrolyte-Gated Transistors with a Variety of Electrode Materials: Exploring Practical Routes to Printed Electronics
Aerosol Jet Printed p- and n-type Electrolyte-Gated Transistors with a Variety of Electrode Materials: Exploring Practical Routes to Printed Electronics
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DOI:
10.1021/am504171u
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发表时间:
2014-11-12
影响因子:
9.5
通讯作者:
Frisbie, C. Daniel
中科院分区:
文献类型:
--
作者:
Hong, Kihyon;Kim, Se Hyun;Frisbie, C. Daniel
Printing electrically functional liquid inks is a promising approach for achieving low-cost, large-area, additive manufacturing of flexible electronic circuits. To print thin-film transistors, a basic building block of thin-film electronics, it is important to have several options for printable electrode materials that exhibit high conductivity, high stability, and low-cost. Here we report completely aerosol jet printed (AJP) p- and n-type electrolyte-gated transistors (EGTs) using a variety of different electrode materials including highly conductive metal nanopartides (Ag), conducting polymers (polystyrene-sulfonate doped poly(3,4-ethylendedioxythiophene, PEDOT:PSS), transparent carbon-based materials (reduced graphene oxide). Using these source-drain electrode materials and a PEDOT:PSS/ion gel gate stack, we demonstrated all-printed p- and n-type EGTs in combination with poly(3-hexythiophene) and ZnO semiconductors. All transistor components (including electrodes, semiconductors, and gate insulators) were printed by AJP. Both kinds of devices showed typical p- and n-type transistor characteristics, and exhibited both low-threshold voltages (