CHARACTERIZATION OF BORON-NITRIDE FILMS DEPOSITED FROM BCL3-NH3-H-2 MIXTURES IN CHEMICAL-VAPOR INFILTRATION CONDITIONS
CHARACTERIZATION OF BORON-NITRIDE FILMS DEPOSITED FROM BCL3-NH3-H-2 MIXTURES IN CHEMICAL-VAPOR INFILTRATION CONDITIONS
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DOI:
10.1007/bf00368905
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发表时间:
1994-03-15
影响因子:
4.5
通讯作者:
ERRE, R
中科院分区:
文献类型:
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作者:
CHOLET, V;VANDENBULCKE, L;ERRE, R
Boron nitride (BN) thin films deposited by isopressure and isothermal chemical vapour infiltration (ICVI) from BCl3-NH3-N-2 mixtures have been characterized from a physicochemical point of view as functions of both the deposition conditions and the destabilizing action of moisture. As-deposited (deposited at 773 K and post-treated at 1273 K), the BN films are turbostractic (d(002)=0.36 nm, L(c)=1.5 nm), have a low density (1.4 g cm(-3)) and contain oxygen (about 20 at %). A first oxygen content (191.5 eV by XPS) is inserted in the films during the CVI step in relation to the hygroscopy of intermediate solid products and the quasi-equilibrium between the formation of BN and B2O3. A second oxygen content (192.5 eV) is due to the hydrolysis of BN by moisture which induces a very drastic transformation of BN. This destabilization affects both boron and nitrogen atoms and leads to the formation of ammonium berate hydrates. Different post-treatments have been investigated to stabilize the BN films and it appears that nitriding under ammonia is the most efficient.