Charged impurity scattering in graphenes: Effects of environmental screening, band gap, and AA stacking
Charged impurity scattering in graphenes: Effects of environmental screening, band gap, and AA stacking
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DOI：
10.1088/1742-6596/302/1/012015
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发表时间：
2011-07
期刊：
影响因子：
--
通讯作者：
T. Ando
中科院分区：
文献类型：
--
作者：
T. Ando
电导率计算的主要带电杂质散射在石墨烯在自一致玻恩近似。在单层石墨烯中，环境介质屏蔽使其有效电势由短范围向长范围变化。在双层石墨烯中，考虑了垂直电场引起的两层不对称对带隙打开的影响和AA堆积的影响。
The conductivity is calculated for dominant charged-impurity scattering in graphenes within a self-consistent Born approximation. In monolayer graphene, environmental dielectric screening is shown to change their effective potential from short to long range. In bilayer graphene, effects of band-gap opening due to asymmetry between two layers caused by perpendicular electric field and effects of AA stacking are considered.