Interfacial Roughening During Solid Phase Epitaxy: Interaction of Dopant, Stress, and Anisotropy Effects
Interfacial Roughening During Solid Phase Epitaxy: Interaction of Dopant, Stress, and Anisotropy Effects
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固相外延过程中的界面粗糙化：掺杂剂、应力和各向异性效应的相互作用
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发表时间：
2004
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影响因子：
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通讯作者：
L. Gray
中科院分区：
文献类型：
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作者：
W. Barvosa;M. Aziz;A. Phan;T. Kaplan;L. Gray
使用截面透射电子显微镜和时间分辨反射率研究了离子注入掺杂硅固相外延生长过程中外部施加的应力和速率增强掺杂剂对界面粗糙度的影响。我们发现在没有仅由掺杂剂梯度产生的外加应力的情况下，长波长粗糙度。随着压应力的增加，界面进一步变得粗糙，强度增大，波长显着减小。我们在模拟的背景下讨论实验结果，包括我们目前对应力、掺杂剂梯度和界面各向异性效应的理解。我们发现这些效应在决定生长形态演化方面存在丰富的相互作用，并证明了该模型的成功和当前的局限性。
The effects of externally applied stress and rate-enhancing dopants on interfacial roughness during the solid phase epitaxial growth of ion-implantation-doped Si are investigated using cross-sectional transmission electron microscopy and time-resolved reflectivity. We find long-wavelength roughness in the absence of an applied stress that arises solely from the dopant-gradient. With the addition of a compressive stress, the interface roughens further with an enhanced magnitude and a dramatically reduced wavelength. We discuss the experimental results in the context of a simulation that includes our current understanding of stress, dopant-gradient, and interface anisotropy effects. We find a rich interplay between these effects in determining growth morphology evolution, and demonstrate the successes and current limitations of the model.