Reduction of interface state density in SiC (0001) MOS structures by low-oxygen-partial-pressure annealing
Reduction of interface state density in SiC (0001) MOS structures by low-oxygen-partial-pressure annealing
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DOI：
10.7567/1882-0786/ab032b
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发表时间：
2019-03-01
影响因子：
2.3
通讯作者：
Kimoto, Tsunenobu
中科院分区：
文献类型：
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作者：
Kobayashi, Takuma;Tachiki, Keita;Kimoto, Tsunenobu
我们报道，在低氧分压（低p(O₂)）环境中退火对于降低碳化硅（0001）/二氧化硅界面在碳化硅导带边（E₋C）附近的界面态密度（D₋IT）是有效的。通过高频（1 MHz） - 低频方法估算，在氧化后的样品中，E₋c - 0.2 eV处的D₋IT值为6.2×10¹² eV⁻¹cm⁻²，通过在1500℃下于含0.001% O₂的环境中进行后续退火（无界面氮化），该值降低至2.4×10¹² eV⁻¹cm⁻²。尽管在纯氩气中退火会在氧化物中引起泄漏电流，但低p(O₂)退火不会降低氧化物的介电性能（击穿场强约为10.4 MV/cm）。（C）2019日本应用物理学会
We report that annealing in low-oxygen-partial-pressure (low-p(O2)) ambient is effective in reducing the interface state density (D-IT) at a SiC (0001)/SiO2 interface near the conduction band edge (E-C) of SiC. The D-IT value at E-c - 0.2 eV estimated by a high (1 MHz)-low method is 6.2 x 10(12) eV(-1)cm(-2) in as-oxidized sample, which is reduced to 2.4 x 10(12) eV(-1)cm(-2 )by subsequent annealing in O-2 (0.001%) at 1500 degrees C, without interface nitridation. Although annealing in pure Ar induces leakage current in the oxide, low-p(O2) annealing does not degrade the oxide dielectric property (breakdown field similar to 10.4 MV cm(-1)). (C) 2019 The Japan Society of Applied Physics