Numerical Modeling of the Point Defect Aggregation during the Czochralski Silicon Crystal Growth
Numerical Modeling of the Point Defect Aggregation during the Czochralski Silicon Crystal Growth
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DOI：
10.1149/1.2069265
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发表时间：
1992-02
影响因子：
3.9
通讯作者：
W. Wijaranakula
中科院分区：
文献类型：
--
作者：
W. Wijaranakula
为了研究提拉法生长过程中本征点缺陷的聚集过程，用数值方法进行了实时模拟。结果表明，点缺陷聚集主要是由硅间隙和空位之间的复合过程决定的。相比之下，点缺陷的长程扩散的贡献可以忽略不计。在被间隙氧饱和的硅中，空位-氧对的形成导致硅间隙饱和，这反过来又引起间隙类型缺陷的形成。
A real-time simulation using the numerical method was performed in order to study the aggregation process of the intrinsic point defects during the Czochralski crystal growth. It was found that the point defect aggregation is predominated by the recombination process between silicon interstitials and vacancies. In contrast, the contribution of the long-range diffusion of point defects is found to be negligible. In silicon saturated with interstitial oxygen the formation of vacancy-oxygen pairs leads to silicon interstitial saturation, which in turn gives rise to a formation of interstitial-type defects