Thermal Quenching of F-centre Luminescence in Al2O3:C
Thermal Quenching of F-centre Luminescence in Al2O3:C
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Al2O3:C 中 F 中心发光的热猝灭
DOI：
10.1093/oxfordjournals.rpd.a032763
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发表时间：
1999
影响因子：
1
通讯作者：
S. McKeever
中科院分区：
文献类型：
--
作者：
M. Akselrod;N. A. Larsen;V. Whitley;S. McKeever
时间分辨光致发光的测量表明，室温下 Al 2 O 3 :C 中的 F 中心发光寿命为 35 ms，在 370 至 500 K 的温度范围内减少到小于 2 ms。寿命的减少遵循经典的 Mott-Seitz 发光热猝灭依赖性，激活能 W 为 1.08 ± 0.03 eV，频率因子 v 为 10 14 s -1。通过热释光 (TL) 辉光曲线的分析也获得了类似的能量和频率因子值。获得的参数与辉光曲线形状、陷阱填充程度以及晶体生长的具体条件无关。结论是Al 2 O 3 :C TL 的加热速率依赖性是F 中心发射热猝灭的结果。
Measurements of time-resolved photoluminescence reveal an F centre luminescence lifetime of 35 ms in Al 2 O 3 :C at room temperature, decreasing to less than 2 ms over the temperature range from 370 to 500 K. The decrease in the lifetime follows a classical Mott-Seitz dependence for thermal quenching of luminescence, with an activation energy W of 1.08 ± 0.03 eV and a frequency factor v of 10 14 s -1 . Similar values for the energy and frequency factor were also obtained from an analysis of thermoluminescence (TL) glow curves. The parameters obtained were independent of the glow curve shape, the degree of trap filling, and the specific conditions under which the crystals were grown. It is concluded that the heating rate dependence of the TL from Al 2 O 3 :C is a result of thermal quenching of the F centre emission.