Electro-optical properties of photorefractive Sn 2 P 2 S 6

Electro-optical properties of photorefractive Sn 2 P 2 S 6
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光折变Sn 2 P 2 S 6 的电光特性

DOI：
10.1364/pemd.2003.73
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发表时间：
2003
期刊：
--
影响因子：
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通讯作者：
Y. Vysochanskii
Y. Vysochanskii
中科院分区：
--
文献类型：
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作者：
D. Haertle;G. Caimi;A. Haldi;G. Montemezzani;P. Güunter;A. Grabar;I. Stoika;Y. Vysochanskii

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我们测量了Sn2P2S6单晶在平行于结晶学x轴的电场下的电光性质。使用了直接干涉技术，并确定了非钳位和钳位值。测量系数较大，在？=633 nm处，未钳位系数Rt111的最大值为174±10 pm/V。相应的折合半波电压为V？=124V。
We measured the electro-optical properties of Sn2P2S6 single crystals for electric fields parallel to the crystallographic x-axis. A direct interferometric technique is used and unclamped as well as clamped values are determined. The measured coefficients are large, with a maximum of 174 ± 10pm/V for the unclamped coefficient rT 111 at ? = 633nm. The corresponding reduced half-wave voltage is V ? = 124 V.