Shallow junction formation on p-like CdTe crystals by indium diffusion using excimer laser annealing
Shallow junction formation on p-like CdTe crystals by indium diffusion using excimer laser annealing
复制标题
使用准分子激光退火通过铟扩散在 p 型 CdTe 晶体上形成浅结
DOI：
10.1007/bf02657710
复制
发表时间：
2001
影响因子：
2.1
通讯作者：
Y. Hatanaka
中科院分区：
文献类型：
--
作者：
M. Niraula;A. Nakamura;T. Aoki;H. Tatsuoka;Y. Hatanaka
研究了准分子激光退火在p-like CdTe晶体上通过铟扩散形成浅结的方法。通过在物理气相沉积系统中蒸发CdTe晶体上的薄层铟而不加热晶体，然后用准分子激光照射它们，我们可以在晶体上产生高导电性的薄表面层。这些层在霍尔测量中显示出n型电导率，并且在光致发光光谱中也观察到供体-受体对波段的增加，可能是由于铟的掺入。所得层的电阻率、载流子浓度和电子迁移率的最佳值分别为5 10−3cm、9 1018cm−3和138 cm2/Vs。然后通过不同温度下的电流-电压测量，研究了形成的浅p-n结的载流子输运特性。此外，还研究了该结在伽马射线探测器中的适用性。
Excimer laser annealing has been investigated to form a shallow junction on p-like CdTe crystals by indium diffusion. By evaporating a thin layer of indium on the CdTe crystals in a physical vapor deposition system without heating the crystals, and then irradiating them with an excimer laser, we could produce a highly conductive thin surface layer on the crystal. These layers showed n-type conductivity in Hall measurements, and an increase on the donor-acceptor pair band, possibly due to indium incorporation, was also observed in the photoluminescent spectrum. The best value of resistivity, carrier concentration and electron mobility of the layer thus obtained was 5 10−3cm, 9 1018cm−3, and 138 cm2/Vs, respectively. The carrier transport properties of the shallow p-n junction formed were then investigated by means of current-voltage measurements at different temperatures. Furthermore, applicability of this junction in a gamma-ray detector was also investigated.