Linear electro-optic effect due to the built-in electric field in InGaN/GaN quantum wells
Linear electro-optic effect due to the built-in electric field in InGaN/GaN quantum wells
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DOI：
10.1063/1.124875
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发表时间：
1999-09
影响因子：
4
通讯作者：
Hongtao Jiang;Jasprit Singh
中科院分区：
文献类型：
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作者：
Hongtao Jiang;Jasprit Singh
强大的压电效应和大的晶格失配使得人们可以在InGaN/GaN量子阱中加入高内置电场。本文考察了这些场对吸收光谱的影响以及由外部垂直电场引起的折射率变化。我们发现由于量子限制Stark效应，InGaN/GaN量子阱表现出线性电光效应。我们的研究结果表明，InGaN/GaN量子阱可以应用于马赫-曾德尔型调制器和蓝光区的电吸收调制器。
A strong piezoelectric effect and large lattice mismatch allow one to incorporate high built-in electric fields in InGaN/GaN quantum wells. This letter examines the implications of these fields on the absorption spectra and refractive index changes induced by an external perpendicular electric field. We find that InGaN/GaN quantum wells show linear electro-optic effect due to quantum confined Stark effect. Our results suggest application of InGaN/GaN quantum wells in Mach–Zehnder type modulators and in electroabsorption modulators in the blue light region.