Al doping in (1−101)GaN films grown on patterned (001)Si substrate
Al doping in (1−101)GaN films grown on patterned (001)Si substrate
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DOI：
10.1063/1.2734098
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发表时间：
2007-05
影响因子：
3.2
通讯作者：
T. Hikosaka;Y. Honda;M. Yamaguchi;N. Sawaki
中科院分区：
文献类型：
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作者：
T. Hikosaka;Y. Honda;M. Yamaguchi;N. Sawaki
研究了Al掺杂对半极性（1−101）GaN晶体和光学性质的影响。样品通过选择性金属有机物气相外延生长在图案化的（001）Si衬底上。X射线分析表明，Al掺杂显著降低了（1 - 101）GaN层中的应变。此外，带边发射带的阴极发光（CL）强度增强，线宽变窄。CL图像显示位错密度降低。这些结果表明，GaN中少量的Al原子改善了晶体和光学性质。结果归因于Al原子的位错钉扎和固溶硬化效应。
The effect of Al doping on crystalline and optical properties of semipolar (1−101)GaN was investigated. The samples were grown on a patterned (001)Si substrate by selective metal-organic vapor phase epitaxy. The x-ray analyses showed that the strain in the (1−101)GaN layer is reduced substantially by the Al doping. Moreover, the cathode-luminescence (CL) intensity of the band edge emission band was enhanced and the linewidth became narrow. The CL images showed the reduction of dislocation density. These results show that the small amount of Al atoms in GaN improves the crystalline and optical properties. The results are attributed to the dislocation pinning and solution hardening effect due to Al atoms.