Orbitronics: Orbital currents in solids
Orbitronics: Orbital currents in solids
复制标题
DOI：
10.1209/0295-5075/ac2653
复制
发表时间：
2021-08-01
期刊：
影响因子：
1.8
通讯作者：
Mokrousov, Yuriy
中科院分区：
文献类型：
--
作者：
Go, Dongwook;Jo, Daegeun;Mokrousov, Yuriy
在固体中，电子布洛赫态是由原子轨道形成的。虽然人们很自然地期望轨道组成和关于Bloch态的信息可以被操纵和传输，类似于过去几十年来广泛研究的自旋自由度，但人们一直认为，由晶场猝灭的轨道阻止了轨道自由度的显著动力学。然而，最近的研究表明，由有限轨道角动量的电子流提供的轨道电流可以在各种材料中产生和传输，尽管基态下的轨道猝灭会产生影响。轨道流在自旋霍尔效应和谷霍尔效应等其他输运现象的机制中也起着重要的作用。最重要的是，轨道电流可以被用来诱导磁化动力学，这是磁学中最关键和最被探索的方面之一。在这里，我们对轨道流的最新进展和研究现状进行了概述。我们回顾了已提出的产生轨道流的物理机制，并讨论了轨道流明显的候选材料。我们回顾了最近关于轨道电流产生和传输的实验，并讨论了各种实验方法来量化这个位于轨道电子学核心的难以捉摸的物体-轨道电子学是一个利用轨道自由度作为固态设备中的信息载体的领域。版权所有(C)2021 Epla
In solids, electronic Bloch states are formed by atomic orbitals. While it is natural to expect that orbital composition and information about Bloch states can be manipulated and transported, in analogy to the spin degree of freedom extensively studied in past decades, it has been assumed that orbital quenching by the crystal field prevents significant dynamics of orbital degrees of freedom. However, recent studies reveal that an orbital current, given by the flow of electrons with a finite orbital angular momentum, can be electrically generated and transported in wide classes of materials despite the effect of orbital quenching in the ground state. Orbital currents also play a fundamental role in the mechanisms of other transport phenomena such as spin Hall effect and valley Hall effect. Most importantly, it has been proposed that orbital currents can be used to induce magnetization dynamics, which is one of the most pivotal and explored aspects of magnetism. Here, we give an overview of recent progress and the current status of research on orbital currents. We review proposed physical mechanisms for generating orbital currents and discuss candidate materials where orbital currents are manifest. We review recent experiments on orbital current generation and transport and discuss various experimental methods to quantify this elusive object at the heart of orbitronics-an area which exploits the orbital degree of freedom as an information carrier in solid-state devices. Copyright (C) 2021 EPLA