Near zero temperature coefficient of resistivity in antiperovskite Mn3Ni1-xCuxN
Near zero temperature coefficient of resistivity in antiperovskite Mn3Ni1-xCuxN
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反钙钛矿 Mn3Ni1-xCuxN 电阻率接近零温度系数
DOI：
10.1063/1.3671183
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发表时间：
2011-12-19
影响因子：
4
通讯作者：
Chen, Xiaolong
中科院分区：
文献类型：
--
作者：
Ding, Lei;Wang, Cong;Chen, Xiaolong
报道了Mn基反钙钛矿结构Mn_3 Ni_（1-x）Cu_xN的近零电阻温度系数（NZ-TCR）。NZ-TCR的温度范围可通过改变Cu含量来控制。此外，在Mn3Ni0.5Cu0.5N中在室温附近的宽温度范围内获得0.09ppm K-1的TCR值。Mn_3 Ni_（1-x）Cu_xN的电阻率从类金属转变为NZ-TCR的反常变化显然是由于磁性转变引起的。根据自旋无序散射解释了NZ-TCR形成的可能原因。(C)2011年美国物理学会。[doi：10.1063/1.3671183]
The near zero temperature coefficient of resistivity (NZ-TCR) in Mn-based antiperovskite Mn3Ni1-xCuxN is reported. The temperature range of NZ-TCR is controllable by changing Cu content. Further, the TCR value of 0.09 ppm K-1 was obtained in Mn3Ni0.5Cu0.5N over a broad temperature range around room temperature. The anomalous resistivity change of Mn3Ni1-xCuxN from metal-like to NZ-TCR behavioris apparently due to a magnetic transition. The possible reason for the formation of NZ-TCR is interpreted on the basis of spin-disorder scattering. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3671183]