Enhanced third harmonic generation from the epsilon-near-zero modes of ultrathin films
Enhanced third harmonic generation from the epsilon-near-zero modes of ultrathin films
复制标题
DOI：
10.1063/1.4917457
复制
发表时间：
2015-04-13
影响因子：
4
通讯作者：
Campione, Salvatore
中科院分区：
文献类型：
--
作者：
Luk, Ting S.;de Ceglia, Domenico;Campione, Salvatore
我们通过实验证明，在泵浦波长为 1.4 μm 的情况下，玻璃基板上的氧化铟锡纳米膜（λ/42 厚）可有效产生三次谐波。通过利用增强因子为200的ε近零模式的场增强特性，实现了3.3 x 10(-6)的转换效率。这种纳米级频率转换方法适用于纵向光学声子频率附近的其他等离子体材料和剩余斯特拉伦材料。 (c) 2015 AIP 出版有限责任公司。
We experimentally demonstrate efficient third harmonic generation from an indium tin oxide nanofilm (lambda/42 thick) on a glass substrate for a pump wavelength of 1.4 mu m. A conversion efficiency of 3.3 x 10(-6) is achieved by exploiting the field enhancement properties of the epsilon-near-zero mode with an enhancement factor of 200. This nanoscale frequency conversion method is applicable to other plasmonic materials and reststrahlen materials in proximity of the longitudinal optical phonon frequencies. (c) 2015 AIP Publishing LLC.