Critical dimensions for the plastic relaxation of strained axial heterostructures in free-standing nanowires
Critical dimensions for the plastic relaxation of strained axial heterostructures in free-standing nanowires
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DOI：
10.1103/physrevb.74.121302
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发表时间：
2006-09-01
影响因子：
3.7
通讯作者：
Glas, Frank
中科院分区：
文献类型：
--
作者：
Glas, Frank
我们认为应变层在顶部的独立纳米线。我们发现，存在一个半径依赖的临界层厚度，低于该厚度不应引入界面位错。当半径小于某个临界值时，临界厚度变为无穷大，在该值以下，可以获得任意厚度的相干层。隐式方程允许从材料参数计算这些临界尺寸。这些都是来自一个连贯的界面，其中的面密度被证明是远远小于在横向无限系统中的系统中存储的弹性能量的评价。
We consider strained layers at the top of free-standing nanowires. We show that there exists a radius-dependent critical layer thickness below which no interfacial dislocation should be introduced. This critical thickness becomes infinite for radii less than some critical value, below which arbitrarily thick coherent layers should be obtainable. Implicit equations allowing the calculation of these critical dimensions from material parameters are given. These are derived from an evaluation of the elastic energy stored in the system with a coherent interface, the areal density of which is shown to be much less than in a laterally infinite system.