Effect of Structural Relaxation on the Electronic Structure of Graphene on Hexagonal Boron Nitride.
Effect of Structural Relaxation on the Electronic Structure of Graphene on Hexagonal Boron Nitride.
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DOI：
10.1103/physrevlett.115.186801
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发表时间：
2015-07
影响因子：
8.6
通讯作者：
G. Slotman;M. V. van Wijk;Peiliang Zhao;A. Fasolino;M. Katsnelson;S. Yuan
中科院分区：
文献类型：
--
作者：
G. Slotman;M. V. van Wijk;Peiliang Zhao;A. Fasolino;M. Katsnelson;S. Yuan
我们计算了石墨烯在六方氮化硼上的电子、光学和输运性质。后者是通过使用全原子模型的结构弛豫产生的。这种弛豫对电子性质至关重要。我们描述了实验观察到的特征，如额外的狄拉克点和磁场中能级的“霍夫施塔特蝴蝶”结构。我们发现电子结构对局部能隙的多体重整很敏感。
We performed calculations of electronic, optical, and transport properties of graphene on hexagonal boron nitride with realistic moiré patterns. The latter are produced by structural relaxation using a fully atomistic model. This relaxation turns out to be crucially important for electronic properties. We describe experimentally observed features such as additional Dirac points and the "Hofstadter butterfly" structure of energy levels in a magnetic field. We find that the electronic structure is sensitive to many-body renormalization of the local energy gap.