Scanning ultrafast electron microscopy reveals photovoltage dynamics at a deeply buried p−Si/SiO2 interface
Scanning ultrafast electron microscopy reveals photovoltage dynamics at a deeply buried p−Si/SiO2 interface
复制标题
扫描超快电子显微镜揭示了深埋 p-Si/SiO2 界面处的光电压动力学
DOI：
10.1103/physrevb.104.l161303
复制
发表时间：
2021
影响因子：
3.7
通讯作者：
Chandler, D. W.
中科院分区：
文献类型：
--
作者：
Ellis, S. R.;Bartelt, N. C.;Léonard, F.;Celio, K. C.;Fuller, E. J.;Hughart, D. R.;Garland, D.;Marinella, M. J.;Michael, J. R.;Chandler, D. W.
了解和控制载流子与埋层绝缘体/半导体界面缺陷的相互作用对于实现现代电子学的最佳性能至关重要。在这里，我们报告了使用扫描超快电子显微镜(SUEM)远程探测埋在厚热氧化物下的硅表面上激发载流子的动力学。我们的测量显示了一种以前未知的超电磁对比机制，即半导体中空间电荷场的光学调制调制厚层氧化物中的电场，从而影响其二次电子产额。通过分析超电子显微镜对比度随时间和激光强度的变化，我们证明了界面陷阱对激发载流子的扩散诱导俘获。
The understanding and control of charge carrier interactions with defects at buried insulator/semiconductor interfaces is essential for achieving optimum performance in modern electronics. Here, we report on the use of scanning ultrafast electron microscopy (SUEM) to remotely probe the dynamics of excited carriers at a Si surface buried below a thick thermal oxide. Our measurements illustrate a previously unidentified SUEM contrast mechanism, whereby optical modulation of the space-charge field in the semiconductor modulates the electric field in the thick oxide, thus affecting its secondary electron yield. By analyzing the SUEM contrast as a function of time and laser fluence we demonstrate the diffusion mediated capture of excited carriers by interfacial traps.