Precise control of single- and bi-layer graphene growths on epitaxial Ni(111) thin film
Precise control of single- and bi-layer graphene growths on epitaxial Ni(111) thin film
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DOI：
10.1063/1.3694662
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发表时间：
2012-03
影响因子：
3.2
通讯作者：
S. Entani;Y. Matsumoto;M. Ohtomo;P. Avramov;H. Naramoto;S. Sakai
中科院分区：
文献类型：
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作者：
S. Entani;Y. Matsumoto;M. Ohtomo;P. Avramov;H. Naramoto;S. Sakai
对超高真空化学气相沉积中的石墨烯生长进行了原位分析，将外延的Ni(111)薄膜暴露于873 K的苯蒸气中。结果表明，通过控制苯暴露在10-105朗缪尔范围内，可以合成高度均匀的单层和双层石墨烯，反映了石墨烯生长速率在第一层和第二层之间变化了三个数量级。单层石墨烯和双层石墨烯的电子能量损失谱测量表明，与单层石墨烯和Ni(111)相比，双层石墨烯与Ni(111)之间的界面相互作用减弱。显微拉曼分析还表明，在完成单层和双层石墨烯生长的特定曝光条件下，在SiO_2衬底上转化的石墨烯薄膜的结构和电学均匀性得到显著改善。
In situ analysis was performed on the graphene growth in ultrahigh vacuum chemical vapor deposition by exposing the epitaxial Ni(111) thin film to benzene vapor at 873 K. It is shown that the highly uniform single- and bi-layer graphenes can be synthesized by the control of benzene exposure in the range of 10–105 langmuirs, reflecting a change in the graphene growth-rate by three orders of magnitude in between the first and second layer. Electron energy loss spectroscopy measurements of single- and bi-layer graphenes indicates that the interface interaction between bi-layer graphene and Ni(111) is weakened in comparison with that between single-layer graphene and Ni(111). It is also clarified from the micro-Raman analysis that the structural and electrical uniformities of the graphene film transformed on a SiO2 substrate are improved remarkably under the specific exposure conditions at which the growths of single- and bi-layer graphenes are completed.