Focused Ion beam implantation of diamond
Focused Ion beam implantation of diamond
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DOI：
10.1016/j.diamond.2011.06.022
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发表时间：
2011-08-01
影响因子：
4.1
通讯作者：
Munroe, P. R.
中科院分区：
文献类型：
--
作者：
McKenzie, W. R.;Quadir, Md. Z.;Munroe, P. R.
本文研究了金刚石与30 kV Ga（+）聚焦离子束的相互作用。电子背散射衍射确定了金刚石表面非晶化的临界剂量为2x 10(14) Ga(+)/cm(2)。扫描透射电子显微镜发现了一个35纳米的非晶碳层，在更高的剂量下，它可以膨胀到原来体积的31%，并容纳大量的镓。电子能量损失和能量色散x射线光谱进一步表征了这一层，并确定了稳定的非晶碳结构中含有过量的氢和氧。(C) 2011 Elsevier B.V.版权所有
The interaction between diamond and a 30 kV Ga(+) focused ion beam, has been studied. Electron backscattered diffraction identified the critical dose for amorphisation of the diamond surface at 2x 10(14) Ga(+)/cm(2). Scanning transmission electron microscopy identified a 35 nm amorphous carbon layer which, at higher doses, can swell up to 31% its original volume and accommodate a significant quantity of gallium. Electron energy loss and energy dispersive X-ray spectroscopy further characterised this layer and identified both excess hydrogen and oxygen contained within a stable amorphous carbon structure. (C) 2011 Elsevier B.V. All rights reserved.