Active Voltage Balancing Methodology for Series connection of 1700V SiC MOSFETs
Active Voltage Balancing Methodology for Series connection of 1700V SiC MOSFETs
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1700V SiC MOSFET 串联的有源电压平衡方法
DOI：
10.1109/wipda46397.2019.8998794
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发表时间：
2019
期刊：
影响因子：
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通讯作者：
S. Bhattacharya
中科院分区：
文献类型：
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作者：
Sanket Parashar;S. Bhattacharya
1.7KV碳化硅(SIC)MOSFET的串联有可能成为紧凑型和轻量化兆瓦功率转换器的积木。这些具有高载流能力(56.5A/片)的器件可以串联在一起，以开发高电压和额定电流的功率转换器。功率器件的串联通常涉及无源电压平衡方法，如R-C缓冲器，这增加了功率变流器的开关损耗。为此，本文介绍了采用有源电压平衡法实现1.7KV碳化硅MOSFET的串联。有源电压平衡避免了R-C缓冲器，从而最大限度地减少了电压失配，从而降低了功率转换器的开关损耗。本文讨论了两个1.7kVSiCMOSFET串联的有源电压平衡的替代方法。仿真和实验结果验证了该方法的有效性。
Series connection of 1.7kV Silicon Carbide (SiC) MOSFETs have potential to become a building block of compact and lightweight Megawatt power converters. These devices with high current carrying capability (56.5A/die) can be connected in series to develop high voltage and current rating power converters. Series connection of power devices generally involves passive voltage balancing methods, such as R-C snubbers, which increases the switching loss in power converters. Therefore, this paper describes the series connection of 1.7kV SiC MOSFETs using Active Voltage Balancing method. Active Voltage Balancing avoids R-C snubbers for minimizing voltage mismatch, thus reducing the switching loss in power converters. An alternative method of Active Voltage Balancing has been discussed in the paper for series connection of two 1.7kV SiC MOSFETs. The proposed method has been verified by simulation and experimental results.