Plasma Induced Subsurface Reactions for Anisotropic Etching of Organic Low Dielectric Film Employing N2 and H2 Gas Chemistry
Plasma Induced Subsurface Reactions for Anisotropic Etching of Organic Low Dielectric Film Employing N2 and H2 Gas Chemistry
复制标题
使用 N2 和 H2 气体化学进行有机低介电薄膜各向异性蚀刻的等离子体诱导次表面反应
DOI：
10.1143/jjap.42.l212
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发表时间：
2003
影响因子：
1.5
通讯作者：
T. Goto
中科院分区：
文献类型：
--
作者：
H. Nagai;M. Hiramatsu;M. Hori;T. Goto
采用傅里叶变换红外衰减全反射（FT-IR ATR）的真实的时间分析方法研究了有机低介电薄膜在低离子轰击能量等离子体作用下的亚表面反应。N2等离子体的暴露导致形成由C（sp2）=N和C（sp3）-N键组成的CN层。在N2等离子体暴露之后，将表面暴露于H2等离子体。C（sp1）-N和C（sp2）=N键被H自由基去除，而C（sp3）-N键保留。发现C（sp3）-N键是抗H2等离子体暴露的关键化学键。在此基础上，提出了N-H等离子体刻蚀有机低k膜各向异性的反应模型。
Subsurface reactions of organic low dielectric (low k) film exposed to plasmas with low ion bombardment energy were investigated by a real time analysis of Fourier transform infrared attenuated total reflection (FT-IR ATR). The exposure of N2 plasma resulted in the formation of a CN layer composed of C(sp2)=N and C(sp3)–N bonds. After the N2 plasma exposure, the surface was exposed to H2 plasma. C(sp1)≡N and C(sp2)=N bonds were removed by the H radicals, while the C(sp3)–N bond remained. It was found that the C(sp3)–N bond was the key chemical bond against H2 plasma exposure. Based on the analyses, a reaction model for anisotropic profile in organic low k film etching employing N–H plasmas is proposed.