Growing graphene on polycrystalline copper foils by ultra-high vacuum chemical vapor deposition
Growing graphene on polycrystalline copper foils by ultra-high vacuum chemical vapor deposition
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DOI：
10.1016/j.carbon.2014.07.011
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发表时间：
2014-11
期刊：
影响因子：
10.9
通讯作者：
N. S. Mueller;A. Morfa;D. Abou‐Ras;Valerio Oddone;T. Ciuk;M. Giersig
中科院分区：
文献类型：
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作者：
N. S. Mueller;A. Morfa;D. Abou‐Ras;Valerio Oddone;T. Ciuk;M. Giersig
我们表明，单层石墨烯可以通过超高真空化学气相沉积（UHV-CVD），使用乙炔作为碳前体等温生长在多晶铜箔。生长是自限制的，产生单层石墨烯，其质量与通过大气压或低压化学气相沉积生长的石墨烯的质量相当。铜升华，一个典型的关注UHV-CVD，被证明是抑制生长石墨烯域。此外，生长后的铜表面的粗糙度类似于在较高压力下生长工艺后的铜箔的粗糙度。的生长动力学上的铜晶粒的表面取向的依赖性进行观察和生长模型，包括所有阶段的增长提出和讨论。类似于在较高生长压力下的观察，石墨烯域具有S形生长，然而总体生长行为更复杂，具有两种随后的生长模式。氢的作用进行了研究，并表明，相反的报道，更高的生长压力，溶解在铜箔中的氢石墨烯的生长起着至关重要的作用，而环境中的氢没有一个明显的影响。
We show that monolayer graphene can be grown isothermally on polycrystalline copper foils via ultra-high vacuum chemical vapor deposition (UHV-CVD), using acetylene as a carbon precursor. The growth is self-limiting, yielding monolayer graphene with a quality comparable to that of graphene grown by atmospheric- or low-pressure chemical vapor deposition. Copper sublimation, a typical concern for UHV-CVD, is shown to be suppressed by growing graphene domains. Further, the roughness of the copper surface after growth is similar to that of copper foils after growth processes at higher pressures. A dependency of the growth kinetics on the surface orientation of the copper grains is observed and a growth model including all stages of growth is presented and discussed. Similar to observations at higher growth pressures, the graphene domains possess sigmoidal growth, however the overall growth behavior is more complicated with two subsequent growth modes. The role of hydrogen is investigated and shows that, contrary to reports for higher growth pressures, dissolved hydrogen in the copper foil plays an essential role for graphene growth whereas ambient hydrogen does not have a noticeable influence.