Temperature dependence of the LO phonon sidebands in free exciton emission of GaN
Temperature dependence of the LO phonon sidebands in free exciton emission of GaN
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DOI：
10.1063/1.2188034
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发表时间：
2006-04
影响因子：
3.2
通讯作者：
Shijie Xu;Guangqi Li;S. Xiong;C. Che
中科院分区：
文献类型：
--
作者：
Shijie Xu;Guangqi Li;S. Xiong;C. Che
本文详细研究了GaN中含有一个或两个LO声子的自由激子随温度变化的辐射复合。结果表明，随着温度的升高，两个声子边带都具有不对称的线型，并且它们与零声子线的能量间距严重偏离LO声子的特征能量.此外，单声子和双声子边带的偏离率也有很大的不同。本文采用Segall-Mahan [Phys.Rev.171，935（1968）]理论，考虑激子-光子和激子-声子相互作用，计算了宽温度范围内自由激子的一个或两个LO声子的边带。仅用一个可调参数就能得到理论与实验的良好一致性，从而确定了重空穴的有效质量（φ 0.5m ~ 0）。
Temperature-dependent radiative recombination of free excitons involving one or two LO phonons in GaN is investigated in detail. It is found that both phonon sidebands possess asymmetric lineshapes and their energy spacings from the zero-phonon line strongly deviate from the characteristic energy of LO phonons as the temperature increases. Furthermore, the deviation rates of one- and two-phonon sidebands are significantly different. Segall-Mahan [Phys. Rev. 171, 935 (1968)] theory, taking the exciton-photon and exciton-phonon interactions into account, is employed to calculate the sidebands of one or two LO phonons for free excitons in a wide temperature range. Excellent agreement between the theory and experiment is achieved by using only one adjustable parameter, which leads to determination of the effective mass of heavy holes (∼0.5m0).