Terahertz plasma waves in gated graphene heterostructures
Terahertz plasma waves in gated graphene heterostructures
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DOI：
10.1143/jjap.45.l923
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发表时间：
2006-09-01
期刊：
影响因子：
--
通讯作者：
Ryzhii, Victor
中科院分区：
文献类型：
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作者：
Ryzhii, Victor
研究了石墨烯基异质结构中的等离子体波，该异质结构具有无质量（类中微子）二维电子气和高导电衬底（n（+）-Si）作为栅极和隔离栅极层NOD。使用开发的模型，我们表明，足够长的等离子体波表现出线性（类声音）的色散与由栅极层厚度和栅极电压确定的波速。石墨烯异质结构中的等离子体波速度可以显著超过通常采用的半导体栅极异质结构中的等离子体波速度。这种栅控石墨烯异质结构可以用于各种新型的电压可调太赫兹器件。利用等离子体波。
Plasma waves in graphene-based heterostructures with massless (neutrino-like) two-dimensional electron gas and with a highly conducting substrate (n(+)-Si) serving as a gate and an isolating gate layer NOD are studied. Using the developed model, we show that the sufficiently long plasma waves exhibit a linear (sound-like) dispersion with the wave velocity determined by the gate layer thickness and the gate voltage. The plasma wave velocity in graphene heterostructures can significantly exceed the plasma wave velocity in the commonly employed semiconductor gated heterostructures. The gated graphene heterostructures can be used in different novel voltage tunable THz devices. which utilize the plasma waves.