Etched ion tracks in amorphous SiO2 characterized by small angle x-ray scattering: influence of ion energy and etching conditions

Etched ion tracks in amorphous SiO2 characterized by small angle x-ray scattering: influence of ion energy and etching conditions
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以小角 X 射线散射为特征的非晶 SiO2 中的蚀刻离子轨迹:离子能量和蚀刻条件的影响

DOI:
10.1088/1361-6528/ab10c8
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发表时间:
2019
期刊:
影响因子:
3.5
通讯作者:
Trautmann
Trautmann
中科院分区:
材料科学3区
文献类型:
--
作者:
Hadley;Notthoff;Mota-Santiago;Hossain;Toimil-Molares;Trautmann

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利用小角X射线散射研究了非晶SiO2薄膜中形成的锥形结构的形态。在德国达姆施塔特的GSI UNILAC用1.1 GeV Au离子辐照样品,在澳大利亚堪培拉的ANU重离子加速器设施用185、89和54 MeV Au离子辐照样品。随后在HF中使用两种不同的蚀刻剂浓度在一系列蚀刻时间内蚀刻经照射的材料,以揭示各种尺寸的圆锥形蚀刻通道。基于同步加速器的SAXS测量被用来表征径向和轴向离子轨道蚀刻速率与前所未有的精度。结果表明,离子能量对蚀刻通道的形态有显着的影响,并且在短的蚀刻时间内导致非常小的圆锥体,在相对于离子轨迹的径向方向上的损伤区域的增加的蚀刻速率是显着的。
Small angle x-ray scattering was used to study the morphology of conical structures formed in thin films of amorphous SiO 2. Samples were irradiated with 1.1 GeV Au ions at the GSI UNILAC in Darmstadt, Germany, and with 185, 89 and 54 MeV Au ions at the Heavy Ion Accelerator Facility at ANU in Canberra, Australia. The irradiated material was subsequently etched in HF using two different etchant concentrations over a series of etch times to reveal conically shaped etched channels of various sizes. Synchrotron based SAXS measurements were used to characterize both the radial and axial ion track etch rates with unprecedented precision. The results show that the ion energy has a significant effect on the morphology of the etched channels, and that at short etch times resulting in very small cones, the increased etching rate of the damaged region in the radial direction with respect to the ion trajectory is significant.
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