Etched ion tracks in amorphous SiO2 characterized by small angle x-ray scattering: influence of ion energy and etching conditions
Etched ion tracks in amorphous SiO2 characterized by small angle x-ray scattering: influence of ion energy and etching conditions
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以小角 X 射线散射为特征的非晶 SiO2 中的蚀刻离子轨迹:离子能量和蚀刻条件的影响
DOI:
10.1088/1361-6528/ab10c8
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发表时间:
2019
期刊:
影响因子:
3.5
通讯作者:
Trautmann
中科院分区:
文献类型:
--
作者:
Hadley;Notthoff;Mota-Santiago;Hossain;Toimil-Molares;Trautmann
Small angle x-ray scattering was used to study the morphology of conical structures formed in thin films of amorphous SiO 2. Samples were irradiated with 1.1 GeV Au ions at the GSI UNILAC in Darmstadt, Germany, and with 185, 89 and 54 MeV Au ions at the Heavy Ion Accelerator Facility at ANU in Canberra, Australia. The irradiated material was subsequently etched in HF using two different etchant concentrations over a series of etch times to reveal conically shaped etched channels of various sizes. Synchrotron based SAXS measurements were used to characterize both the radial and axial ion track etch rates with unprecedented precision. The results show that the ion energy has a significant effect on the morphology of the etched channels, and that at short etch times resulting in very small cones, the increased etching rate of the damaged region in the radial direction with respect to the ion trajectory is significant.
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