High performance SiC trench devices with ultra-low ron

High performance SiC trench devices with ultra-low ron
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DOI：
10.1109/iedm.2011.6131619
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发表时间：
2011-12
期刊：
2011 International Electron Devices Meeting
影响因子：
--
通讯作者：
Takashi Nakamura;Y. Nakano;M. Aketa;R. Nakamura;Shuhei Mitani;H. Sakairi;Y. Yokotsuji
Takashi Nakamura;Y. Nakano;M. Aketa;R. Nakamura;Shuhei Mitani;H. Sakairi;Y. Yokotsuji
中科院分区：
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文献类型：
--
作者：
Takashi Nakamura;Y. Nakano;M. Aketa;R. Nakamura;Shuhei Mitani;H. Sakairi;Y. Yokotsuji

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We have developed SiC trench structure Schottoky diodes and SiC double-trench MOSFETs. We succeeded in improving device performance by the reduction of the electric field through the introduction of the aforementioned trench structures. The threshold voltage of the trench structure Schottky diode is 0.48V smaller than the planar. Also, the lowest on-resistance in SiC MOSFETs was achieved.