Design of stable 700V Lateral MOSFET for new generation, low-cost off-line SMPS

Design of stable 700V Lateral MOSFET for new generation, low-cost off-line SMPS
复制标题

DOI：
--
复制
发表时间：
2010-06
期刊：
2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD)
影响因子：
--
通讯作者：
Sujit Banerjee;V. Parthasarathy;M. Manley
Sujit Banerjee;V. Parthasarathy;M. Manley
中科院分区：
其他
文献类型：
--
作者：
Sujit Banerjee;V. Parthasarathy;M. Manley

文献摘要

被引文献

相似文献

为提高700V横向MOSFET器件在寿命应力下的通态特性稳定性，对BiCMOS工艺进行了优化设计。这使得新一代离线SMPS IC具有原边反馈，与前一代产品相比，具有更高的系统集成度。
Design of 700V Lateral MOSFET integrated in a BiCMOS process has been optimized to improve the stability of its on-state characteristics during lifetime stress. This has enabled new generation off-line SMPS ICs with primary side feedback that has much higher level of system integration compared to earlier generation products.