A highly pixelated CdZnTe detector based on Topmetal-II- sensor
A highly pixelated CdZnTe detector based on Topmetal-II- sensor
复制标题
基于 Topmetal-II 传感器的高度像素化 CdZnTe 探测器
DOI：
10.1088/1674-1137/41/4/046003
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发表时间：
2017
影响因子：
3.6
通讯作者：
Wang Dong
中科院分区：
文献类型：
--
作者：
Zou Shu-Guang;Fan Yan;Sun Xiang-Ming;Huang Guang-Ming;Pei Hua;Wang Zhen;Liu Jun;Yang Ping;Wang Dong
Ⅱ是一种节距为83μm的低噪声CMOS象素直接电荷传感器，是一种优良的辐射探测半导体材料。将镉锌碲与该传感器相结合，可以构建出高空间分辨率的探测器。在我们的实验中，使用了一种环氧胶作为导电介质来连接传感器和碲化锌镉(CdZnTe)。在-2V的低偏压下测量了电子的扩散系数和电荷效率，得到了具有合理空间分辨率的单个α粒子的清晰图像。具有这种结构的探测器有可能随着传感器的进一步改进而应用于X射线成像系统。
Topmetal-Ⅱ-is a low noise CMOS pixel direct charge sensor with a pitch of 83 μm. CdZnTe is an excellent semiconductor material for radiation detection. The combination of CdZnTe and the sensor makes it possible to build a detector with high spatial resolution. In our experiments, an epoxy adhesive is used as the conductive medium to connect the sensor and cadmium zinc telluride (CdZnTe). The diffusion coefficient and charge efficiency of electrons are measured at a low bias voltage of-2 V, and the image of a single alpha particle is clear with a reasonable spatial resolution. A detector with such a structure has the potential to be applied in X-ray imaging systems with further improvements of the sensor.(authors)