Stabilizing n-type hetero-junctions for NiOx based inverted planar perovskite solar cells with an efficiency of 21.6%
Stabilizing n-type hetero-junctions for NiOx based inverted planar perovskite solar cells with an efficiency of 21.6%
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稳定%20n型%20异质结%20for%20NiOx%20based%20倒置%20平面%20钙钛矿%20太阳能%20cells%20with%20an%20效率%20of%2021.6%
DOI：
10.1039/c9ta12368g
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发表时间：
2020-01-28
影响因子：
11.9
通讯作者：
He, Zhubing
中科院分区：
文献类型：
--
作者：
Chen, Wei;Pang, Guotao;He, Zhubing
倒置钙钛矿太阳能电池（PSC）的性能和稳定性，特别是具有稳定的金属氧化物空穴传输层的那些，受到钙钛矿/电子传输层异质结的不稳定性的限制。在这项工作中，我们展示了一种成功的策略，通过使用化学稳定的无机CdxZn 1 − xSeyS 1 −y量子点（QD）来钝化和稳定基于氧化镍的倒置平面PSC中的钙钛矿/电子传输层n型异质结。实验和理论结果表明，量子点可以有效地抑制钙钛矿表面的缺陷/陷阱（不饱和Pb 2+和移动的碘离子），从而显著减少界面复合，提高n型异质结的稳定性.因此，对于QD钝化的钙钛矿基器件，开路电压从1.075 V显著提高到1.162 V，功率转换效率从19.47%显著提高到21.63%。我们还表明，稳定的n型异质结的结果在一个显着改善的长期和操作设备的稳定性。我们的工作证明了一种有效而简单的方法来稳定钙钛矿/电子传输层界面，以开发高效稳定的倒置平面PSC，这将使这些器件更接近未来的商业应用。
The performance and stability of inverted perovskite solar cells (PSC), in particular, those with stable metal oxide hole transport layers, are limited by the instability of perovskite/electron transport layer heterojunctions. In this work, we demonstrate a successful strategy for passivating and stabilizing the perovskite/electronic transport layer n-type heterojunction in a nickel oxide based inverted planar PSC by using chemically stable inorganic CdxZn1−xSeyS1−y quantum dots (QDs). Experimental and theoretical results demonstrate that the defects/traps (unsaturated Pb2+ and mobile iodine ions) on perovskite surfaces can be substantially suppressed by the QDs, leading to a significant reduction of interfacial recombination and more stable n-type heterojunction. Consequently, a significant enhancement of the open-circuit voltage from 1.075 V to 1.162 V and power conversion efficiency from 19.47% to 21.63% is achieved for the QD passivated perovskite-based devices. We also demonstrate that the stabilized n-type hetero-junction results in a dramatic improvement of long-term and operational device stability. Our work demonstrates an effective and simple way to stabilize the perovskite/electron transport layer interface to develop high efficiency stable inverted planar PSCs, which will bring these devices closer to future commercial applications.