Magnetic-field-induced suppression of tunnelling into a two-dimensional electron system

Magnetic-field-induced suppression of tunnelling into a two-dimensional electron system
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磁场诱导的二维电子系统隧道效应抑制

DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
H. Shtrikman
H. Shtrikman
中科院分区：
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文献类型：
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作者：
T. Reker;Y. Chung;H. Im;P. Klipstein;R. Nicholas;H. Shtrikman

文献摘要

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在垂直于双势垒异质结构势垒排列的磁场中研究了三维发射极接触和二维电子系统 (2DES) 之间的隧道效应。费米能周围的微分电导表现出与磁场相关的赝能隙。该赝能隙被证明是热激活的并且取决于二维电子密度。我们将这种赝能隙归因于电子从发射极隧道穿入 2DES 时必须克服的额外能量，这是 2DES 相关态的结果。
Tunnelling between a three-dimensional emitter contact and a two-dimensional electron system (2DES) is studied in magnetic fields aligned perpendicular to the barriers of a double-barrier heterostructure. The differential conductance around the Fermi energy exhibits a magnetic-field-dependent pseudogap. This pseudogap is shown to be thermally activated and to depend on the two-dimensional electron density. We attribute this pseudogap to an extra energy that an electron tunnelling from the emitter into the 2DES has to overcome as a result of the correlated state of the 2DES.