Mono- and Ditopic Bisfunctionalization of Graphene
Mono- and Ditopic Bisfunctionalization of Graphene
复制标题
DOI：
10.1002/anie.201511807
复制
发表时间：
2016-05-04
影响因子：
16.6
通讯作者：
Hirsch, Andreas
中科院分区：
文献类型：
--
作者：
Knirsch, Kathrin C.;Schaefer, Ricarda A.;Hirsch, Andreas
首次报道了采用两个连续的还原和共价键形成步骤对石墨烯进行双功能化。分散体中的本体官能化和沉积在表面上的单个片材的官能化都已经进行。而在前一种情况下，从基面的两侧攻击是可能的，并可能导致无应变的架构，在后一种情况下，反官能化可以变得重要时，相应的阴离子的加数是一个足够好的离去基团。
For the first time, the bisfunctionalization of graphene by employing two successive reduction and covalent bond forming steps is reported. Bulk functionalization in dispersion and functionalization of individual sheets deposited on surfaces have both been carried out. Whereas in the former case attacks from both sides of the basal plane are possible and can lead to strain-free architectures, in the latter case, retrofunctionalizations can become important when the corresponding anion of the addend is a sufficiently good leaving group.