Image charges in semiconductor quantum wells: Effect on exciton binding energy.
Image charges in semiconductor quantum wells: Effect on exciton binding energy.
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半导体量子阱中的图像电荷：对激子结合能的影响。
DOI：
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发表时间：
1990
期刊：
影响因子：
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通讯作者：
D. Bimberg
中科院分区：
文献类型：
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作者：
D. Thoai;R. Zimmermann;Marius Grundmann;D. Bimberg
计算了量子阱结构中激子的结合能，充分考虑了像电荷、有限势垒、电子和空穴的z相关性以及各向异性空穴质量的影响。的影响，不连续的质量和不连续的介电常数的接口进行了详细的评估：虽然质量差变得重要，只有当激子波函数穿透到障碍，图像电荷明显修改库仑相互作用，因此影响激子结合能，即使在阱宽度大于激子玻尔半径。技术上重要的，特定的材料系统的结果。
Binding energies of excitons in a quantum-well structure are calculated including fully the effects of image charges, finite barriers, the z correlation of electrons and holes, and anisotropic hole masses. The influence of discontinuous masses and discontinuous dielectric constants across the interfaces is evaluated in detail: While the mass difference becomes important only when the excitonic wave function penetrates into the barrier, the image charges appreciably modify the Coulomb interaction and therefore influence the exciton binding energy even at well widths larger than the exciton Bohr radius. Results for technologically important, particular material systems are presented.