THERMAL DISSOCIATION OF EXCITONS BOUNDS TO NEUTRAL ACCEPTORS IN HIGH-PURITY GAAS
THERMAL DISSOCIATION OF EXCITONS BOUNDS TO NEUTRAL ACCEPTORS IN HIGH-PURITY GAAS
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DOI：
10.1103/physrevb.4.3451
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发表时间：
1971-01-01
期刊：
影响因子：
--
通讯作者：
GROBE, E
中科院分区：
文献类型：
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作者：
BIMBERG, D;SONDERGELD, M;GROBE, E
通过测量积分发射的温度依赖关系，研究了束缚在中性受主上的激子的离解。观察到所有受体的两个解离过程。从6K开始，空穴的解离降低了发射，而从10K开始，空穴和电子的解离起主导作用。计算了空穴和电子与中性受主的结合能。预测并验证了电离受主-激子复合线的光谱位置。推导出了定量描述测量结果的公式。
The dissociation of excitons bound to neutral acceptors in GaAs is investigated by measurements of the temperature dependence of the integrated emission. Two dissociation processes are observed for all acceptors. Dissociation of holes reduces the emission starting at about 6 K, while from about 10 K upwards a dissociation of both holes and electrons dominates. The binding energies of the holes and of the electrons bound to the neutral acceptors are evaluated. The spectral positions of ionized acceptor-exciton recombination lines are predicted and verified. A formula is derived which describes the measurements quantitatively.