Microstructures, defects, and localization luminescence in InGaAsN alloy films
Microstructures, defects, and localization luminescence in InGaAsN alloy films
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InGaAsN 合金薄膜的微观结构、缺陷和局域发光
DOI：
10.1002/pssc.200303399
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
Y. Shiraki
中科院分区：
文献类型：
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作者：
F. Nakajima;S. Sanorpim;Takahisa Yamamoto;E. Takuma;R. Katayama;H. Ichinose;K. Onabe;Y. Shiraki
研究了低压金属有机气相外延InxGa1−xAs1−YNy(x=0.116，∼0.3，y=0-0.031)合金薄膜的结构和光学性质，并用高分辨电子显微镜和光致发光光谱进行了测量。还考察了氮气气氛下700℃快速热退火(RTA)的影响。透射电子显微镜观察表明，随着杂质含量的增加，InGaAsN/GaAsN界面附近的位错不仅由于与衬底的较大晶格失配而失配，而且由于局域应变弛豫而导致的InGaAsN层中的许多缺陷也增加了。从高In含量层(x=0.3-0.355)的能量色散X射线(EDX)分析中，我们发现InGaAsN层有明显的起伏。7K下测得的In0.116Ga0.884As1−yNy(y=0-0.031)的光致发光峰向高能方向移动，而InxGa1-−xAs1−yNy(x=∼0.3，y=0-0.015)的光致发光峰异常地向低能方向移动。RTA后高In层的这种反常行为可能归因于微观尺度上成分涨落形成的量子点状区域的扩大。(2013Wiley-VCH Verlag GmbH&Co.KGaA，Weinheim)
We studied the structural and optical properties of InxGa1−xAs1−yNy (x = 0.116, ∼0.3 and y = 0–0.031) alloy films grown by low-pressure metalorganic vapour epitaxy (LP-MOVPE), performing high-resolution transmission electron microscopy (HRTEM) and photoluminescece (PL) measurements. The effects of rapid thermal annealing (RTA) at 700 °C under N2 ambient were also examined. The TEM images showed that with increasing In content, not only misfit dislocations near the InGaAsN/GaAs interface due to the large lattice mismatch with the GaAs subatrate, but also many defects in the InGaAsN layer due to the relaxation of local strain increased. From energy dispersive X-ray (EDX) analysis of the high In-content layers (x = 0.3–0.355), we found a significant In fluctuation in the InGaAsN layer. The PL peaks of In0.116Ga0.884As1−yNy (y = 0–0.031) measured at 7 K shifted to the high-energy side after RTA, while those of InxGa1−xAs1−yNy (x = ∼0.3, y = 0–0.015) shifted unusually to the low-energy side. This unsual behavior of the high In-content layer after RTA may be attributed to the enlargement of quantum-dot-like regions, which are formed by the compositional fluctuation in microscopic scale. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)