Au-Free AlGaN/GaN Power Diode on 8-in Si Substrate With Gated Edge Termination
Au-Free AlGaN/GaN Power Diode on 8-in Si Substrate With Gated Edge Termination
复制标题
DOI：
10.1109/led.2013.2267933
复制
发表时间：
2013-08-01
影响因子：
4.9
通讯作者：
Decoutere, Stefaan
中科院分区：
文献类型：
--
作者：
Lenci, Silvia;De Jaeger, Brice;Decoutere, Stefaan
高性能的AlGaN/GaN二极管是在8英寸硅片上采用无Au的CMOS兼容技术实现的。二极管与AlGaN/GaN金属绝缘体半导体高电子迁移率晶体管共集成在同一衬底上，只需一个额外的光刻步骤。二极管阳极和晶体管栅极一起加工，并对两者使用相同的金属化，避免了专门用于肖特基结的额外金属沉积。门控边缘终端允许获得较低的反向泄漏电流(在-600 V时在1 mA/mm范围内)，这比在同一晶片上加工的传统肖特基二极管低几个数量级。在阳极处采用凹槽，导致二极管导通电压值较低(
High-performance AlGaN/GaN diodes are realized on 8-in Si wafers with Au-free CMOS-compatible technology. The diodes are cointegrated on the same substrate together with the AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors and with only one extra lithographic step. The diode anode and the transistor gate are processed together and the same metallization is used for both, avoiding extra metal deposition dedicated to the Schottky junction. A gated edge termination allows obtaining low reverse leakage current ( within 1 mu A/mm at -600 V), which is several orders of magnitude lower than the one of conventional Schottky diodes processed on the same wafer. Recess is implemented at the anode, resulting in low diode turn-on voltage values (