Synthesis of large-area multilayer hexagonal boron nitride for high material performance.

Synthesis of large-area multilayer hexagonal boron nitride for high material performance.
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DOI:
10.1038/ncomms9662
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发表时间:
2015-10-28
影响因子:
16.6
通讯作者:
Kong J
Kong J
中科院分区:
综合性期刊1区
文献类型:
--
作者:
Kim SM;Hsu A;Park MH;Chae SH;Yun SJ;Lee JS;Cho DH;Fang W;Lee C;Palacios T;Dresselhaus M;Kim KK;Lee YH;Kong J

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虽然六方氮化硼(h-BN)是栅极绝缘材料的一种很好的候选材料,因为它最大限度地减少了与衬底的相互作用,但在具有可用的二维半导体的电子器件中的进一步应用仍然受到片层尺寸的限制。虽然已经用化学气相沉积(CVD)在铂和铜箔上合成了单层h-BN,但还没有多层h-BN。在这里,我们以铁箔为原料,以硼氮为前驱体,用化学气相沉积法合成了大面积多层h-BN薄膜。这些薄膜具有很强的阴极发光和较高的机械强度(杨氏模数:1.16±0.1Tpa),这让人想起高质量h- 的形成。在多层h-BN薄膜上化学气相沉积生长的石墨烯在室温下的载流子迁移率高达∼24,000  V−1 S−1,高于剥离h-BN的∼13,000 2 V−1 S−1。通过在MoS_2(WSe_2)场效应晶体管的SiO_2/Si衬底上放置额外的h-BN,最小化了栅氧化物的掺杂效应,并且迁移率提高了四(150)倍。多层h-BN薄膜在二维纳米电子学中有着广泛的应用前景。在这里,作者展示了在具有高2D材料性能的铁箔上合成大面积、高质量的h-BN多层膜。
Although hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimizing interaction from substrate, further applications to electronic devices with available two-dimensional semiconductors continue to be limited by flake size. While monolayer h-BN has been synthesized on Pt and Cu foil using chemical vapour deposition (CVD), multilayer h-BN is still absent. Here we use Fe foil and synthesize large-area multilayer h-BN film by CVD with a borazine precursor. These films reveal strong cathodoluminescence and high mechanical strength (Young's modulus: 1.16±0.1 TPa), reminiscent of formation of high-quality h-BN. The CVD-grown graphene on multilayer h-BN film yields a high carrier mobility of ∼24,000 cm2 V−1 s−1 at room temperature, higher than that (∼13,000 2 V−1 s−1) with exfoliated h-BN. By placing additional h-BN on a SiO2/Si substrate for a MoS2 (WSe2) field-effect transistor, the doping effect from gate oxide is minimized and furthermore the mobility is improved by four (150) times. Multilayer h-BN films are highly desired for various applications in 2D nanoelectronics. Here, the authors demonstrate the synthesis of large-area and high-quality multi-layer h-BN films on Fe foil with high 2D material performance.