Synthesis of large-area multilayer hexagonal boron nitride for high material performance.
Synthesis of large-area multilayer hexagonal boron nitride for high material performance.
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DOI:
10.1038/ncomms9662
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发表时间:
2015-10-28
影响因子:
16.6
通讯作者:
Kong J
中科院分区:
文献类型:
--
作者:
Kim SM;Hsu A;Park MH;Chae SH;Yun SJ;Lee JS;Cho DH;Fang W;Lee C;Palacios T;Dresselhaus M;Kim KK;Lee YH;Kong J
Although hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimizing interaction from substrate, further applications to electronic devices with available two-dimensional semiconductors continue to be limited by flake size. While monolayer h-BN has been synthesized on Pt and Cu foil using chemical vapour deposition (CVD), multilayer h-BN is still absent. Here we use Fe foil and synthesize large-area multilayer h-BN film by CVD with a borazine precursor. These films reveal strong cathodoluminescence and high mechanical strength (Young's modulus: 1.16±0.1 TPa), reminiscent of formation of high-quality h-BN. The CVD-grown graphene on multilayer h-BN film yields a high carrier mobility of ∼24,000 cm2 V−1 s−1 at room temperature, higher than that (∼13,000 2 V−1 s−1) with exfoliated h-BN. By placing additional h-BN on a SiO2/Si substrate for a MoS2 (WSe2) field-effect transistor, the doping effect from gate oxide is minimized and furthermore the mobility is improved by four (150) times. Multilayer h-BN films are highly desired for various applications in 2D nanoelectronics. Here, the authors demonstrate the synthesis of large-area and high-quality multi-layer h-BN films on Fe foil with high 2D material performance.