Hydrogen-Modulated Step Graded Junction Termination Extension in GaN Vertical p-n Diodes
Hydrogen-Modulated Step Graded Junction Termination Extension in GaN Vertical p-n Diodes
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GaN 垂直 p-n 二极管中的氢调制阶梯分级结终端扩展
DOI：
10.1109/led.2021.3091335
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发表时间：
2021
影响因子：
4.9
通讯作者：
B. Shen
中科院分区：
文献类型：
--
作者：
Wei Lin;Maojun Wang;R. Yin;Jin Wei;C. Wen;B. Xie;Y. Hao;B. Shen
结终端扩展(JTE)是硅和碳化硅功率器件中一种成熟的边缘终端结构，但由于缺乏成熟的选择性区域掺杂技术，在GaN中仍然是一个技术挑战。在本工作中，通过逐渐扩大氢等离子体处理的光刻窗口和控制氢在p-GaN中的热扩散，实现了具有氢调制阶梯状JTE的GaN垂直p-n二极管(HMSG-JTE)。HMSG-JTE导致空穴分布从主结向外逐渐减小，横向扩散电场，减小反向偏压下的电场峰值。因此，HMSG-JTE成功地将垂直GaN p-n二极管的击穿电压从661V(采用氢等离子体边缘终端)提高到1489V。
Junction termination extension (JTE) is a mature edge termination structure in Si and SiC power devices, but remains a technical challenge in GaN due to lack of mature selective area doping technique. In this work, GaN vertical p-n diodes with Hydrogen-Modulated Step Graded JTE (HMSG-JTE) are realized by gradually enlarging photolithography windows for hydrogen plasma treatment and controlled thermal diffusion of hydrogen in p-GaN. HMSG-JTE leads to a gradually decreasing hole distribution outwards from the main junction, which laterally spreads the electric field and mitigates the electric field peak under reverse bias. Consequently, the breakdown voltage of vertical GaN p-n diode is successfully boosted from 661 V (with hydrogen-plasma-based edge termination) to 1489 V with HMSG-JTE.