Growth mechanism of polycrystalline β‐SiC layers on silicon substrate
Growth mechanism of polycrystalline β‐SiC layers on silicon substrate
复制标题
硅衬底上多晶β-SiC层的生长机理
DOI：
10.1063/1.1654282
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发表时间：
1972
影响因子：
4
通讯作者：
E. Wagner
中科院分区：
文献类型：
--
作者：
J. Graul;E. Wagner
用碳氢化合物将单晶硅表面化学转化为多晶β -碳化硅，并用14C示踪法研究了其生长机理。结果表明，碳化硅层的生长是由于硅在碳化硅层中的扩散，在样品表面发生了硅-碳化硅转化。测定了渗层厚度与渗碳时间和载气氢中碳氢化合物浓度的关系。
The surface of monocrystalline silicon was chemically converted with hydrocarbon to polycrystalline β‐silicon carbide, and the growth mechanism was investigated by means of 14C tracer method. It is shown that the growth of the silicon carbide layer is due to diffusion of silicon through the SiC layer so that the Si–SiC conversion is taking place at the surface of the sample. Dependence of layer thickness on carbidizing time and on hydrocarbon concentration in the carrier gas hydrogen was measured.