Annealing Effects for Ca3NbGa3Si2O14 Piezoelectric Single Crystals Grown by Micro-Pulling-Down Method
Annealing Effects for Ca3NbGa3Si2O14 Piezoelectric Single Crystals Grown by Micro-Pulling-Down Method
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DOI：
10.1080/00150193.2013.843383
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发表时间：
2013-01
期刊：
影响因子：
0.8
通讯作者：
Y. Yokota;Masanori Kitahara;S. Kurosawa;Masato Sato;Kazushige Tota;K. Onodera;A. Yoshikawa
中科院分区：
文献类型：
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作者：
Y. Yokota;Masanori Kitahara;S. Kurosawa;Masato Sato;Kazushige Tota;K. Onodera;A. Yoshikawa
研究了在空气和Ar气氛中生长的Langasite型Ca3NbGa3Si2O14[CNGs]压电晶体在不同温度和气氛下的退火过程，研究了退火对晶体各项性能的影响。在空气中生长的CNGs晶体在1300℃的Ar气氛中经1300℃的热处理后，360 nm和500 nm附近的吸收峰有所降低。另一方面，空气中1300℃的热处理使在Ar中生长的CNGs晶体的透过率降低了300-500 nm。结果表明，在350 nm和500 nm附近的吸收是由过量氧引起的，后退火可以控制晶体中的氧含量。
The langasite-type Ca3NbGa3Si2O14 [CNGS] piezoelectric crystals grown in Air and Ar were annealed under various temperatures and atmospheres and the effects of annealing on various properties were investigated. The absorption peaks around 360 and 500 nm of CNGS crystals grown in Air decreased by the annealing at 1300°C in Ar. On the other hand, the annealing at 1300°C in Air decreased transmittance in the range from 300 to 500 nm for the CNGS crystal grown in Ar. The results suggest that the absorptions around 350 and 500 nm originate from the excess oxygen and the post-annealing can control the oxygen content in the crystals.