Demonstration of nonpolar m-plane InGaN/GaN laser diodes

Demonstration of nonpolar m-plane InGaN/GaN laser diodes
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DOI：
10.1143/jjap.46.l190
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发表时间：
2007-03-01
期刊：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
影响因子：
--
通讯作者：
Nakamura, Shuji
Nakamura, Shuji
中科院分区：
其他
文献类型：
--
作者：
Schmidt, Mathew C.;Kim, Kwang-Choong;Nakamura, Shuji

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第一个非极性m面（1（1）over bar 00）氮化物激光二极管（LD）已经在低扩展缺陷m面GaN衬底上实现。使用类似于c平面器件生长的条件通过金属有机化学气相沉积（MOCVD）生长LD。在脉冲条件下制造和测试了宽区域激光器。在高达10%的占空比下观察到激光。这些激光二极管的阈值电流密度（J（th））低至7.5 kA/cm（2）。在405.5 nm处观察到受激发射，光谱线宽为1 nm。
The first nonpolar m-plane (1 (1) over bar 00) nitride laser diodes (LDs) have been realized on low extended defect bulk m-plane GaN substrates. The LDs were grown by metal organic chemical vapor deposition (MOCVD) using conditions similar to that of c-plane device growth. Broad area lasers were fabricated and tested under pulsed conditions. Lasing was observed at duty cycles as high as 10%. These laser diodes had threshold current densities (J(th)) as low as 7.5 kA/cm(2). Stimulated emission was observed at 405.5 nm, with a spectral line-width of 1 nm.