Bandgap-graded ZnO/(CdS)1−x (ZnS) x coaxial nanowire arrays for semiconductor-sensitized solar cells
Bandgap-graded ZnO/(CdS)1−x (ZnS) x coaxial nanowire arrays for semiconductor-sensitized solar cells
复制标题
DOI:
10.1088/2053-1591/1/1/015021
复制
发表时间:
2014-01
影响因子:
2.3
通讯作者:
Liang Chu;Luying Li;W. Ahmad;Zhen Wang;Xianli Xie;Jiangyu Rao;Nishuang Liu;J. Su;Yihua Gao
中科院分区:
文献类型:
--
作者:
Liang Chu;Luying Li;W. Ahmad;Zhen Wang;Xianli Xie;Jiangyu Rao;Nishuang Liu;J. Su;Yihua Gao
Bandgap-graded ZnO/(CdS)1−x (ZnS) x (0 ≦̸ x ≦̸ 1) coaxial nanowire arrays on transparent conducting oxide substrates have been successfully fabricated by a facile two-step-approach, combining hydrothermal method and successive ion exchange reactions. Energy-dispersive x-ray spectroscopy elemental analysis suggests that the shells are composed of (CdS)1−x (ZnS) x double-layer structures, which are thoroughly and tightly synthesized on the ZnO cores, and play the role of sensitizers. The as-prepared ZnO/(CdS)1−x (ZnS) x coaxial nanowire arrays are demonstrated to be controllably adjusted in their optical absorption from ultraviolet to green via compositional effect, and are promising electrodes for semiconductor-sensitized solar cells. The photoelectrode based on the ZnO/CdS coaxial nanowire array shows good performance with power conversion efficiency of 2.093%, a short-circuit current density 7.733 mA cm−2, and an open-circuit voltage 0.536 V.