Bandgap-graded ZnO/(CdS)1−x (ZnS) x coaxial nanowire arrays for semiconductor-sensitized solar cells

Bandgap-graded ZnO/(CdS)1−x (ZnS) x coaxial nanowire arrays for semiconductor-sensitized solar cells
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DOI:
10.1088/2053-1591/1/1/015021
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发表时间:
2014-01
影响因子:
2.3
通讯作者:
Liang Chu;Luying Li;W. Ahmad;Zhen Wang;Xianli Xie;Jiangyu Rao;Nishuang Liu;J. Su;Yihua Gao
Liang Chu;Luying Li;W. Ahmad;Zhen Wang;Xianli Xie;Jiangyu Rao;Nishuang Liu;J. Su;Yihua Gao
中科院分区:
材料科学4区
文献类型:
--
作者:
Liang Chu;Luying Li;W. Ahmad;Zhen Wang;Xianli Xie;Jiangyu Rao;Nishuang Liu;J. Su;Yihua Gao

文献摘要

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采用水热法和离子交换法相结合的两步法在透明导电氧化物衬底上成功制备了ZnO/(CdS)1−x(ZnS)x(0 x 1)同轴纳米线阵列。能量色散X射线光谱元素分析表明,壳层由(CdS)1−x(ZnS)x双层结构组成,这些结构在ZnO核上充分而紧密地合成,并发挥敏化剂的作用。所制备的ZnO/(CdS)1−x(ZnS)x共轴纳米线阵列通过组分效应可以在紫外到绿色范围内可控地调节其光吸收,是一种很有前途的光电转换器敏化太阳能电池电极.基于ZnO/CdS同轴纳米线阵列的光电极表现出良好的性能,其功率转换效率为2.093%,短路电流密度为7.733 mA cm-2,开路电压为0.536 V。
Bandgap-graded ZnO/(CdS)1−x (ZnS) x (0 ≦̸ x ≦̸ 1) coaxial nanowire arrays on transparent conducting oxide substrates have been successfully fabricated by a facile two-step-approach, combining hydrothermal method and successive ion exchange reactions. Energy-dispersive x-ray spectroscopy elemental analysis suggests that the shells are composed of (CdS)1−x (ZnS) x double-layer structures, which are thoroughly and tightly synthesized on the ZnO cores, and play the role of sensitizers. The as-prepared ZnO/(CdS)1−x (ZnS) x coaxial nanowire arrays are demonstrated to be controllably adjusted in their optical absorption from ultraviolet to green via compositional effect, and are promising electrodes for semiconductor-sensitized solar cells. The photoelectrode based on the ZnO/CdS coaxial nanowire array shows good performance with power conversion efficiency of 2.093%, a short-circuit current density 7.733 mA cm−2, and an open-circuit voltage 0.536 V.